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| SEMiX302GAL12E4s Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 150 C Tj = 175 C Tc = 25 C Tc = 80 C 1200 463 356 300 900 -20 ... 20 10 -40 ... 175 356 266 300 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 900 1620 -40 ... 175 Tc = 25 C Tc = 80 C 356 266 300 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 900 1620 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A A A A A C A C V Conditions Values Unit SEMiX(R) 2s Trench IGBT Modules SEMiX302GAL12E4s Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 C Typical Applications* * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 18.6 1.16 1.02 1700 2.50 1.8 2.2 0.8 0.7 3.3 5.0 5.8 0.1 2.05 2.4 0.9 0.8 3.8 5.3 6.5 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C GAL (c) by SEMIKRON Rev. 0 - 05.05.2010 1 SEMiX302GAL12E4s Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 600 V IC = 300 A Tj = 150 C Tj = 150 C Tj = 150 C min. typ. 282 60 30 564 117 44 max. Unit ns ns mJ ns ns mJ RG on = 1.9 Tj = 150 C RG off = 1.9 di/dton = 5000 A/s Tj = 150 C di/dtoff = 2800 A/s Tj = 150 C per IGBT Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 4300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 300 A Tj = 150 C di/dtoff = 4300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode 1.1 0.7 2.2 3.3 1.1 0.7 2.2 3.3 SEMiX(R) 2s Trench IGBT Modules SEMiX302GAL12E4s Rth(j-c) 0.096 2.1 2.1 1.3 0.9 2.8 3.9 230 50 19 0.17 2.1 2.1 1.3 0.9 2.8 3.9 230 50 19 0.17 18 2.5 2.4 1.5 1.1 3.2 4.3 2.46 2.4 1.5 1.1 3.2 4.3 K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W nH m m K/W Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic Welding Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w Temperatur Sensor R100 B100/125 res., terminal-chip per module to heat sink (M5) Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5 TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.045 5 5 250 Nm Nm Nm g K Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% GAL 2 Rev. 0 - 05.05.2010 (c) by SEMIKRON SEMiX302GAL12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 05.05.2010 3 SEMiX302GAL12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 05.05.2010 (c) by SEMIKRON SEMiX302GAL12E4s SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 05.05.2010 5 |
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